HIGH-RESOLUTION DOUBLE-LAYER RESIST SYSTEM USING NEW SILICONE BASED NEGATIVE RESIST (SNR)

被引:19
作者
MORITA, M
TANAKA, A
IMAMURA, S
TAMAMURA, T
KOGURE, O
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 10期
关键词
D O I
10.1143/JJAP.22.L659
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L659 / L660
页数:2
相关论文
共 5 条
[1]  
BOWDEN MJ, 1981, SOLID STATE TECHNOL, V24, P73
[2]  
HATZAKIS M, 1981, 1981 P INT C MICR LA, P386
[3]   HIGH-PERFORMANCE ELECTRON NEGATIVE RESIST, CHLOROMETHYLATED POLYSTYRENE - A STUDY ON MOLECULAR-PARAMETERS [J].
IMAMURA, S ;
TAMAMURA, T ;
HARADA, K ;
SUGAWARA, S .
JOURNAL OF APPLIED POLYMER SCIENCE, 1982, 27 (03) :937-949
[4]  
LIN BJ, 1983, SOLID STATE TECHNOL, V26, P105
[5]   HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].
MORAN, JM ;
MAYDAN, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624