EFFECT OF RESPUTTERING ON COMPOSITION OF WSIX FILMS DEPOSITED BY MULTILAYER SPUTTERING

被引：8

作者：

BRUCE, R

EICHER, S

WESTWOOD, WD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575300

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1642 / 1645

页数：4

共 14 条

[1]

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[2]

Benninghoven A., 1987, SECONDARY ION MASS S

[3]

BONIFIELD TD, 1986, V MIC C P, P71

[4] WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

CALLEGARI, A ;

SPIERS, GD ;

MAGERLEIN, JH ;

GUTHRIE, HC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2054-2058

[5] WSIX FORMATION IN W-SI MULTILAYERS [J].

EICHER, S ;

BRUCE, RA .

CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) :868-871

[6]

HOFFMAN DG, COMMUNICATION

[7] INTERNAL-STRESSES IN CR, MO, TA, AND PT FILMS DEPOSITED BY SPUTTERING FROM A PLANAR MAGNETRON SOURCE [J].

HOFFMAN, DW ;

THORNTON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :355-358

[8] RESPUTTERING DURING ION-BEAM SPUTTER DEPOSITION [J].

HOFFMAN, DW ;

BADGLEY, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1791-1791

[9] CAPACITANCE VOLTAGE CHARACTERIZATION OF SILICIDE GAAS SCHOTTKY CONTACTS [J].

JACKSON, TN ;

DEGELORMO, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1676-1679

[10]

KANAMORI M, 1985, P GAAS IC S MONTEREY, P49

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