ION-INDUCED AUGER EMISSION FROM SI, AL AND ALXMG1-X SAMPLES

被引：14

作者：

OLIVA, A ^{[1
]}

BONANNO, A ^{[1
]}

CAMARCA, M ^{[1
]}

XU, F ^{[1
]}

机构：

[1] CSIM, UNITA GNSM, I-87036 RENDE, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 58卷 / 3-4期

关键词：

D O I：

10.1016/0168-583X(91)95865-B

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Angular resolved investigations of Auger atomic lines induced by ion bombarment have been conducted on Si, Al and Al(x)Mg1-x samples. It is confirmed, by direct experimental evidence, that the atomic-like Auger emission occurs outside the sample and new transitions are also observed. All main Auger atomic lines exhibit large Doppler shifts which can be accounted by a simple binary collision model in which only excitation of primary recoils by violent asymmetric collisions are considered. Under normal Ar+ ion incidence doubly excited L2MM Auger peaks are observed for Al(x)Mg1-x samples (x = 0.25, 0.50, 0.75, 1.0), such peaks are absent in pure Al bombarded under the same conditions, indicating that such excitations are generated by asymmetric Mg-Al collisions. The results also show an enrichment of Al within the first layers for an Al0.50Mg0.50 sample as the bombarding energy is increased. This enrichment can be interpreted in terms of preferential sputtering and segregation effects.

引用

页码：333 / 341

页数：9

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