EFFECT OF THE IMAGE CHARGE ON SINGLE-ELECTRON TUNNELING

被引：14

作者：

KOROTKOV, AN ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,INST NUCL PHYS,MOSCOW 119899,RUSSIA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.49.11508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The existence of an image charge causes a modification of the tunnel barrier shape, which depends on the effective junction capacitance C. The tunneling rate can be calculated using the expression of the orthodox theory of single-electron tunneling, with an additional prefactor of the order of exp(taue2/HBARC) where tau is the tunneling traversal time.

引用

页码：11508 / 11510

页数：3

共 9 条

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