HELIUM AND HYDROGEN DECORATED CAVITIES IN SILICON

被引：33

作者：

HAKVOORT, RA ^{[1
]}

VANVEEN, A ^{[1
]}

MIJNARENDS, PE ^{[1
]}

SCHUT, H ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,INTERFAC REACTOR INST,2629 JB DELFT,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1995年 / 85卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)00342-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of stable voids in Si by helium implantation and annealing is studied with the aid of the slow-positron depth profiling method. Decoration of the voids with helium or hydrogen reduces positronium formation in the voids and thus lowers the high value of the S-parameter found for large empty cavities in Si. Annealing at 800 degrees C recovers the original empty cavities.

引用

页码：271 / 275

页数：5

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