A CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY STUDY OF SILICIDE GROWTH-KINETICS IN THE CR/(100)SI SYSTEM AT 425-DEGREES-C

被引:16
作者
NATAN, M
DUNCAN, SW
BYER, NE
机构
关键词
D O I
10.1063/1.333399
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1450 / 1452
页数:3
相关论文
共 12 条
[11]   IMPLANTED OXYGEN IN NISI FORMATION [J].
SCOTT, DM ;
NICOLET, MA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :773-778
[12]   ADVANCES IN TRANSMISSION ELECTRON-MICROSCOPE TECHNIQUES APPLIED TO DEVICE FAILURE ANALYSIS [J].
SHENG, TT ;
MARCUS, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :737-743