A VERSATILE 700-1200-V IC PROCESS FOR ANALOG AND SWITCHING APPLICATIONS

被引：33

作者：

LUDIKHUIZE, AW

机构：

[1] Philips Research Laboratories, NL5600 JA Eindhoven

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 07期

关键词：

D O I：

10.1109/16.85153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An IC process with a wide range of devices up to 1200 V is described. In addition to low-voltage bipolars and CMOS and 230-V VDMOS it provides 700-V high-side LDMOS, HV-PMOS (EPMOS) and low-voltage circuitry, low-side 1200 V LDMOS and 700-V LIGBT, as well as 700-V interconnection. These features have been realized by using a substrate of higher resistance in a previously published 250-300-V IC process and by adaptation in the Resurf structure for lateral DMOS. Application examples for flyback and half-bridge power conversion and as a power-bridge driver are given.

引用

页码：1582 / 1589

页数：8

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