LATERAL HVIC WITH 1200-V BIPOLAR AND FIELD-EFFECT DEVICES

被引：22

作者：

CHANG, MF

PIFER, G

YILMAZ, H

WILDI, EJ

HODGINS, RG

KING, OY

ADLER, MS

机构：

[1] GE,SYRACUSE,NY 13201

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1109/T-ED.1986.22858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1992 / 2001

页数：10

共 12 条

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ADLER, MS ;

TEMPLE, VAK ;

RUSTAY, RC .

SOLID-STATE ELECTRONICS, 1982, 25 (12) :1179-1186

[2]

APPELS JA, 1979, IEDM, P238

[3]

Becke H. W., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P724

[4] INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J].

CHOU, S .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :811-&

[5] EFFECTS OF DRIFT REGION PARAMETERS ON THE STATIC PROPERTIES OF POWER LDMOST [J].

COLAK, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) :1455-1466

[6]

Colak S., 1980, PESC '80 Record. IEEE Power Electronics Specialists Conference, P164

[7]

Ghandi S., 1977, SEMICONDUCTOR POWER, V1st

[8]

SUN E, 1978, IEDM, P478

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10]

SZE SM, 1967, SOLID STATE ELECTRON, V10, P1105

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