LASER PROJECTION PATTERNED PROCESSING OF SEMICONDUCTORS

被引：4

作者：

FOULON, F ^{[1
]}

GREEN, M ^{[1
]}

LAWES, RA ^{[1
]}

BAKER, J ^{[1
]}

GOODALL, FN ^{[1
]}

ARTHUR, G ^{[1
]}

机构：

[1] RUTHERFORD APPLETON LAB,DIDCOT OX11 0QX,OXON,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90058-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper is concerned with laser projection patterned processing of material. We first describe the technique and discuss its limitations and its prospects for utilization in the fabrication of a complete IC. Then, experimental results on laser projection patterned etching of GaAs in a chlorine atmosphere performed with an KrF excimer laser and deep UV optics are reported. The dependence of etch rate, surface quality and spatial resolution on the various etching parameters are discussed. The overall etching process is thermally driven and not concerned with photochemical reactions.

引用

页码：291 / 297

页数：7

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