OPTICAL AMPLIFICATION AND ITS SATURATION IN SEMICONDUCTOR QUANTUM-WELLS

被引：8

作者：

BONGIOVANNI, G ^{[1
]}

BUTTY, J ^{[1
]}

STAEHLI, JL ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE, INST PHYS APPL, PH ECUBLENS, CH-1015 LAUSANNE, SWITZERLAND

来源：

OPTICAL ENGINEERING | 1995年 / 34卷 / 07期

关键词：

OPTICAL AMPLIFICATION; QUANTUM WELLS; EH PLASMA; LUMINESCENCE SPECTRA;

D O I：

10.1117/12.200612

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The spontaneous and stimulated emissions of strongly excited GaAs/(Ga,Al)As quantum wells are investigated in the one-dimensional optical amplifier geometry, using the variable-stripe-length method. The optical amplification and its saturation are studied by monitoring the spectra of spontaneous and amplified luminescence as a function of the position on the stripe. The deduced experimental spatial dependences of carrier and luminous densities are found to agree in a semiquantitative way with the numerical solutions of the amplifier equation, obtained by assuming steady state and thermal carrier distributions. Saturation of optical amplification is caused by two effects: (1) carrier depopulation through stimulated recombination of electron-hole pairs, and (2) loss of light caused by scattering at sample defects and by imperfect wave guiding.

引用

页码：1941 / 1950

页数：10

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