ELECTRON-HOLE PLASMA DECAY TIME IN GAAS/(GA, AL)AS QUANTUM-WELLS

被引：6

作者：

BONGIOVANNI, G ^{[1
]}

STAEHLI, JL ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,PH ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 173卷 / 01期

关键词：

D O I：

10.1002/pssb.2221730136

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A steady state photoluminescence experiment is reported investigating the lifetime of an electron-hole plasma confined in a quintum well. The results are compared with theoretical evaluations of the pure radiative decay rate and good agreement is found. The effects caused by the filling of electron and hole subbands are also discussed.

引用

页码：365 / 371

页数：7

共 16 条

[1]

BONGIOVANNI G, IN PRESS SOLID STATE

[2] ELECTRON-HOLE PLASMA IN DIRECT-GAP GA1-XALXAS AND K-SELECTION RULE [J].

CAPIZZI, M ;

MODESTI, S ;

FROVA, A ;

STAEHLI, JL ;

GUZZI, M ;

LOGAN, RA .

PHYSICAL REVIEW B, 1984, 29 (04) :2028-2035

[3] EFFECT OF PHONON SELF-ENERGY CORRECTION ON HOT-ELECTRON RELAXATION IN TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS [J].

DASSARMA, S ;

JAIN, JK ;

JALABERT, R .

PHYSICAL REVIEW B, 1988, 37 (09) :4560-4566

[4] OPTICAL-PROPERTIES OF FAST-DIFFUSING SOLID-STATE PLASMAS [J].

FORCHEL, A ;

SCHWEIZER, H ;

MAHLER, G .

PHYSICAL REVIEW LETTERS, 1983, 51 (06) :501-504

[5] ELECTRON-HOLE PLASMA-DIFFUSION IN DIRECT-GAP SEMICONDUCTORS [J].

GUZZI, M ;

STAEHLI, JL ;

CAPIZZI, M ;

LOGAN, RA .

EUROPHYSICS LETTERS, 1986, 2 (07) :547-554

[6] ELECTRON THEORY OF THE OPTICAL-PROPERTIES OF LASER-EXCITED SEMICONDUCTORS [J].

HAUG, H ;

SCHMITTRINK, S .

PROGRESS IN QUANTUM ELECTRONICS, 1984, 9 (01) :3-100

[7] TRANSPORT OF AN OPTICALLY GENERATED ELECTRON-HOLE PLASMA IN A SEMICONDUCTOR SLAB - APPROACH TO STATIONARITY [J].

HELD, T ;

KUHN, T ;

MAHLER, G .

PHYSICAL REVIEW B, 1990, 41 (08) :5144-5151

[8] OPTICAL INVESTIGATIONS ON THE MOBILITY OF TWO-DIMENSIONAL EXCITONS IN GAAS/GA1-XALXAS QUANTUM WELLS [J].

HILLMER, H ;

FORCHEL, A ;

HANSMANN, S ;

MOROHASHI, M ;

LOPEZ, E ;

MEIER, HP ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 39 (15) :10901-10912

[9] OPTICAL-PROPERTIES OF HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS [J].

KLINGSHIRN, C ;

HAUG, H .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1981, 70 (05) :315-398

[10] PLASMA EXPANSION AND BAND-GAP RENORMALIZATION IN CDTE AND GAP [J].

SCHWEIZER, H ;

ZIELINSKI, E .

JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :37-49

← 1 2 →