SILICON EPITAXIAL-GROWTH USING DICHLOROSILANE

被引：10

作者：

ROBINSON, PH ^{[1
]}

GOLDSMITH, N ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1007/BF02655408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 328

页数：16

共 14 条

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[2] BERKMAN S, PRIVATE COMMUNICATIO
[3] DAIELLO RV, TO BE PUBLISHED
[4] DYER LD, 1973, SEMICONDUCTOR SILICO, P201
[5] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
SEVERIN, PJW
BREKEL, CHJV
PEEK, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +
[6] GOLDSMITH N, 1973, RCA REV, V34, P358
[7] KERN W, 1970, RCA REV, V31, P187
[8] LANG GA, 1963, RCA REV, V24, P488
[9] EPITAXIAL-GROWTH OF SILICON FROM DICHLOROSILANE
LEKHOLM, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1122 - &
[10] SILICON EPITAXIAL-GROWTH
NISHIZAWA, JI
TERASAKI, T
SHIMBO, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +