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OPTIMIZATION AND APPLICATION OF GLANCING ANGLE RUTHERFORD BACKSCATTERING SPECTROMETRY

被引：4
作者：
TAMMINGA, Y
WILLEMSEN, MFC
VANSILFHOUT, R
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期
关键词：
D O I：
10.1016/0167-5087(83)90963-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：107 / 110
页数：4
相关论文
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[2]  
Chu WK., 1978, BACKSCATTERING SPECT
[3]   PRECISE PROFILES FOR ARSENIC IMPLANTED IN SI AND SIO2 OVER A WIDE IMPLANTATION ENERGY-RANGE (10 KEV-2.56 MEV) [J].
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[4]   HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY AND THE ANALYSIS OF VERY THIN SILICON-NITRIDE LAYERS [J].
TAMMINGA, Y ;
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 200 (2-3) :499-504
[5]   APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS [J].
WILLIAMS, JS .
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[6]  
Ziegler J.F., 1977, HELIUM STOPPING POWE, V4
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