PERTURBED ANGULAR-CORRELATION STUDIES OF DOPANT ATOM INTERACTIONS IN SILICON

被引：37

作者：

WICHERT, T ^{[1
]}

SWANSON, ML ^{[1
]}

机构：

[1] UNIV N CAROLINA, DEPT PHYS & ASTRON, CHAPEL HILL, NC 27599 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3026 / 3037

页数：12

共 65 条

[1]

[Anonymous], 1934, J CHEM PHYS

[2]

Antoncik E., 1986, Radiation Effects, V88, P217, DOI 10.1080/00337578608207481

[3] DATA REDUCTION METHODOLOGY FOR PERTURBED ANGULAR-CORRELATION EXPERIMENTS [J].

ARENDS, AR ;

HOHENEMSER, C ;

PLEITER, F ;

DEWAARD, H ;

CHOW, L ;

SUTER, RM .

HYPERFINE INTERACTIONS, 1980, 8 (03) :191-213

[4]

BAERI P, 1979, J APPL PHYS, V50, P280

[5]

BENTON JL, 1983, MATER RES SOC S P, V14, P95

[6] INFRARED-ABSORPTION AND RAMAN-SPECTRA OF LI-COMPENSATED B-DOPED SI [J].

CARDONA, M ;

SHEN, SC ;

VARMA, SP .

PHYSICAL REVIEW B, 1981, 23 (10) :5329-5334

[7]

CHAPPERT J, 1984, MUONS PIONS MATERIAL, P251

[8]

CHARTRE A, 1988, MATER RES SOC S P, V104, P37

[9]

Chu W. K., 1979, AIP C P, V50, P305

[10]

CORBETT JW, 1966, SOLID STATE PHYS S, V7

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