INFLUENCE OF TE CONCENTRATION ON THE INFRARED CATHODOLUMINESCENCE OF GAAS-TE WAFERS

被引：23

作者：

MENDEZ, B

PIQUERAS, J

机构：

[1] Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.348636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.

引用

页码：2776 / 2779

页数：4

共 11 条

[1]

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[2]

Dussac M., 1985, Defect Recognition and Image Processing in III-V Compounds. Proceedings of the International Symposium, P209

[3]

GOVORKOV AV, 1978, SOV PHYS SEMICOND+, V12, P259

[4] ANNEALING-INDUCED PRISMATIC DISLOCATION LOOPS AND ELECTRICAL CHANGES IN HEAVILY TE-DOPED GAAS [J].