SPATIAL-DISTRIBUTION OF DEFECTS IN GAAS-TE WAFERS STUDIED BY CATHODOLUMINESCENCE

被引：6

作者：

MENDEZ, B

PIQUERAS, J

DOMINGUEZADAME, F

DEDIEGO, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4466 / 4468

页数：3

共 26 条

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