HIGH-RESOLUTION IMAGING OF THE EL2 DISTRIBUTION IN THIN SEMIINSULATING GAAS WAFERS - A COMPARISON WITH X-RAY TOPOGRAPHY

被引：25

作者：

ALT, HC

PACKEISER, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

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D O I：

10.1063/1.337768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2954 / 2958

页数：5

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