DISLOCATION GETTERING IN SEMIINSULATING GAAS INVESTIGATED BY CATHODOLUMINESCENCE

被引：10

作者：

DING, J ^{[1
]}

CHANG, JSC ^{[1
]}

BUJATTI, M ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV MICROWAVE TECHNOL,SANTA ROSA,CA 95401

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 16期

关键词：

D O I：

10.1063/1.97979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1089 / 1091

页数：3

共 21 条

[1] LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS [J].

BARRETT, DL ;

MCGUIGAN, S ;

HOBGOOD, HM ;

ELDRIDGE, GW ;

THOMAS, RN .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :179-184

[2] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J].

CHEN, RT ;

HOLMES, DE ;

ASBECK, PM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :459-461

[3] EFFECTS OF THERMAL ANNEALING ON SEMI-INSULATING UNDOPED GAAS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J].

CHIN, AK ;

CAMLIBEL, I ;

CARUSO, R ;

YOUNG, MSS ;

VONNEIDA, AR .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2203-2209

[4] UNIFORMITY CHARACTERIZATION OF SEMI-INSULATING GAAS BY CATHODOLUMINESCENCE IMAGING [J].

CHIN, AK ;

CARUSO, R ;

YOUNG, MSS ;

VONNEIDA, AR .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :552-554

[5] GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS [J].

DOBRILLA, P ;

BLAKEMORE, JS ;

MCCAMANT, AJ ;

GLEASON, KR ;

KOYAMA, RY .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :602-604

[6] THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS [J].

HONDA, T ;

ISHII, Y ;

MIYAZAWA, S ;

YAMAZAKI, H ;

NANISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (05) :L270-L272

[7] CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

HOVEL, HJ ;

GUIDOTTI, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2331-2338

[8] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[9] ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL [J].

KAMEJIMA, T ;

SHIMURA, F ;

MATSUMOTO, Y ;

WATANABE, H ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L721-L723

[10] THRESHOLD VOLTAGE UNIFORMITY OF GAAS-FETS ON INGOT-ANNEALED SUBSTRATES [J].

KASAHARA, J ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L85-L86

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