共 16 条
[1]
OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS (REDR) AT LOW-TEMPERATURE BY MEANS OF CATHODOLUMINESCENCE AND PHOTO-LUMINESCENCE IN GAP
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1981, 68 (02)
:K203-K206
[3]
POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1986, 19 (03)
:331-344
[5]
A UNIFYING INTERPRETATION OF DARK LINE DEFECTS IN GAAS AND BRIGHT DISLOCATION HALOS IN GAP
[J].
PHYSICA B & C,
1983, 116 (1-3)
:420-424
[6]
IIZUKA T, 1971, J ELECTROCHEM SOC, V118, P1180
[8]
KUHNKUHNENFELD F, 1977, I PHYS C SER A, V33, P159
[10]
POSITRON TRAPPING AT DISLOCATIONS IN COPPER
[J].
CANADIAN JOURNAL OF PHYSICS,
1974, 52 (09)
:759-765