OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS (REDR) AT LOW-TEMPERATURE BY MEANS OF CATHODOLUMINESCENCE AND PHOTO-LUMINESCENCE IN GAP

被引：3

作者：

BEREK, H

KIRSTEN, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K203 / K206

页数：4

共 9 条

[1] EVALUATION OF DEFECTS AND DEGRADATION IN GAAS-GAALAS WAFERS USING TRANSMISSION CATHODOLUMINESCENCE [J].

CHIN, AK ;

KERAMIDAS, VG ;

JOHNSTON, WD ;

MAHAJAN, S ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :978-983

[2] RECOMBINATION-ENHANCED DEFECT REACTIONS STRONG NEW EVIDENCE FOR AN OLD CONCEPT IN SEMICONDUCTORS [J].

DEAN, PJ ;

CHOYKE, WJ .

ADVANCES IN PHYSICS, 1977, 26 (01) :1-30

[3]

FERENCZI F, UNPUB

[4]

FERENCZI G, 1981, CRYST RES TECHNOL, V16, P203

[5] INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS [J].

KIMERLING, LC ;

PETROFF, P ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1976, 28 (06) :297-300

[6] RECOMBINATION ENHANCED DEFECT REACTIONS [J].

KIMERLING, LC .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1391-1401

[7] OBSERVATION OF ATHERMAL DEFECT ANNEALING IN GAP [J].

LANG, DV ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :248-250

[8] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3899-3903

[9] ANNIHILATION OF FROZEN-IN POINT-DEFECTS IN GAP BY THERMAL AND RECOMBINATION-INDUCED PROCESSES [J].

WERKHOVEN, C ;

HENGST, JHT ;

VANOPDORP, C .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :136-138

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