DC-ELECTRIC-FIELD DEPENDENCE OF THZ RADIATION-INDUCED BY FEMTOSECOND OPTICAL-EXCITATION OF BULK GAAS

被引：46

作者：

HU, BB ^{[1
]}

WELING, AS ^{[1
]}

AUSTON, DH ^{[1
]}

KUZNETSOV, AV ^{[1
]}

STANTON, CJ ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT PHYS,GAINESVILLE,FL 32611

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.49.2234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a systematic study of the de-electric-field dependence of THz radiation from a bulk GaAs sample optically excited by femtosecond pulses. The experimental results reveal that both displacement and transport currents contribute to THz radiation and the relative contributions are shown to be very sensitive to the dc electric field. This observation agrees qualitatively with a simulation based on a fully quantum-mechanical treatment of the transient photoconductive response of GaAs.

引用

页码：2234 / 2237

页数：4

共 15 条

[11] HOT-ELECTRON DYNAMICS STUDY BY TERAHERTZ RADIATION FROM LARGE-APERTURE GAAS P-I-N-DIODES [J].