FAST AND SLOW STATES AT THE INTERFACE OF AMORPHOUS-SILICON AND SILICON-NITRIDE

被引：46

作者：

STREET, RA

TSAI, CC

机构：

来源：

关键词：

D O I：

10.1063/1.96851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1672 / 1674

页数：3

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[1]

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[3]

POWELL MJ, 1983, APPL PHYS LETT, V43, P1187

[4] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

STREET, RA ;

THOMPSON, MJ ;

JOHNSON, NM .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01) :1-17

STREET, RA ;

THOMPSON, MJ .

[7]

TANELIAN M, 1982, PHILOS MAG B, V45, P435