ELECTRONIC STATES AT THE HYDROGENATED AMORPHOUS-SILICON SILICON- NITRIDE INTERFACE

被引：55

作者：

STREET, RA

THOMPSON, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：769 / 771

页数：3

共 11 条

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J].

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW LETTERS, 1983, 51 (21) :2003-2006

[2] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

STREET, RA ;

THOMPSON, MJ .

SOLID STATE COMMUNICATIONS, 1983, 47 (06) :435-438

[3] CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J].

POWELL, MJ .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :597-599

[4] GAP STATES IN SILICON-NITRIDE [J].

ROBERTSON, J ;

POWELL, MJ .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :415-417

[5] EVIDENCE FOR LATTICE-MISMATCH INDUCED DEFECTS IN AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS [J].

ROXLO, CB ;

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW LETTERS, 1984, 52 (22) :1994-1997

[6] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[7] MEASUREMENTS OF DEPLETION LAYERS IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW B, 1983, 27 (08) :4924-4932

[8]

STREET RA, PHILOS MAG

[9] BANDGAP AND RESISTIVITY OF AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].

TIEDJE, T ;

ABELES, B ;

PERSANS, PD ;

BROOKS, BG ;

CODY, GD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :345-350

[10]

TIEDJE T, 1984, TOP APPL PHYS, V56, P262

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