CONTRIBUTION TO DIRECT MEASUREMENT OF DOUBLE-LAYER POTENTIAL AT THE OXIDE ELECTROLYTE INTERFACE

被引:19
作者
CICHOS, C
GEIDEL, T
机构
关键词
D O I
10.1007/BF01451674
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:947 / 953
页数:7
相关论文
共 10 条
[1]   STUDIES OF DOUBLE LAYER AT OXIDE-SOLUTION INTERFACE [J].
AHMED, SM .
JOURNAL OF PHYSICAL CHEMISTRY, 1969, 73 (11) :3546-&
[3]   SEMICONDUCTOR FIELD-EFFECT FOR MEASUREMENT OF DOUBLE-LAYER POTENTIAL ON OXIDE-ELECTROLYTE INTERFACES [J].
CICHOS, C ;
GEIDEL, T .
COLLOID AND POLYMER SCIENCE, 1978, 256 (11) :1140-1141
[4]  
CICHOS C, 1980, FIZIKOCHEMICZNE PROB, V12, P57
[5]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]  
LOHMANN F, 1966, BERICH BUNSEN GESELL, V70, P428
[7]   TRANSISTOR METHOD FOR MEASURING CHANGES IN DOUBLE-LAYER POTENTIALS [J].
SCHENCK, JF .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1977, 61 (03) :569-576
[8]  
SCHWABE K, 1963, PH MESSTECHNIK
[9]   PHYSICAL AND DIELECTRIC PROPERTIES OF THE METAL-SILICON DIOXIDE-SILICON SYSTEM [J].
SPRAGUE, JL ;
MINAHAN, JA ;
WIED, OJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :94-98
[10]   ZERO POINT OF CHARGE OF ALPHA-ALUMINA [J].
YOPPS, JA ;
FUERSTENAU, DW .
JOURNAL OF COLLOID SCIENCE, 1964, 19 (01) :61-&