COLLECTION VELOCITY OF EXCESS MINORITY-CARRIERS AT METAL-SEMICONDUCTOR CONTACTS IN SOLAR-CELLS

被引：16

作者：

CARD, HC ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.322503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4964 / 4967

页数：4

共 20 条

[1] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS
ANDERSON, WA
MILANO, RA
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 206 - 208
[2] SCHOTTKY-BARRIER DIODES FOR SOLAR ENERGY-CONVERSION
ANDERSON, WA
DELAHOY, AE
[J]. PROCEEDINGS OF THE IEEE, 1972, 60 (11) : 1457 - 1458
[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[4] MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS
CARD, HC
YANG, ES
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 51 - 53
[5] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS
CARD, HC
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (10) : 881 - 883
[6] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 365 - 374
[7] AL P-SILICON MOS PHOTOVOLTAIC CELL
CHARLSON, EJ
LIEN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3982 - 3987
[8] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS
CROWELL, CR
BEGUWALA, M
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1149 - &
[9] EPITAXIAL SILICON SOLAR CELL
DALAL, VL
KRESSEL, H
ROBINSON, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1283 - 1285
[10] DEPLETION LAYER COLLECTION EFFICIENCY FOR P-N-JUNCTION, SCHOTTKY DIODE, AND SURFACE INSULATOR SOLAR CELLS
GREEN, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 547 - 554

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