GALVANOMAGNETIC LUMINESCENCE OF INDIUM-ANTIMONIDE

被引：10

作者：

BERDAHL, P

SHAFFER, L

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1330 / 1332

页数：3

共 20 条

[1] RADIANT REFRIGERATION BY SEMICONDUCTOR DIODES [J].

BERDAHL, P .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1369-1374

[2]

Bolgov S. S., 1979, Soviet Technical Physics Letters, V5, P610

[3]

BOLGOV SS, 1983, SOV PHYS SEMICOND+, V17, P134

[4] MAGNETIC OPTICAL BAND GAP EFFECT IN INSB [J].

BURSTEIN, E ;

PICUS, GS ;

GEBBIE, HA ;

BLATT, F .

PHYSICAL REVIEW, 1956, 103 (03) :826-828

[5] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

CAMASSEL, J ;

AUVERGNE, D .

PHYSICAL REVIEW B, 1975, 12 (08) :3258-3267

[6] EFFECTS OF DIFFUSION CURRENT ON GALVANOMAGNETIC PROPERTIES IN THIN INTRINSIC INSB AT ROOM-TEMPERATURE [J].

FUJISADA, H .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3530-3540

[7]

GELMONT BL, 1979, SOV PHYS JETP, V48, P268

[8] DEPENDENCE OF PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS ON SLAB THICKNESS IN INSB AT ROOM-TEMPERATURE [J].

HANUS, W ;

OSZWALDOWSKI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02) :445-452

[9]

Ivanov-Omskii V. I., 1965, SOV PHYS DOKL, V10, P345

[10]

IVANOVOMSKII VI, 1966, SOV PHYS JETP LETT, V3, P185

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