PROPERTIES OF AU OXIDE INP METAL-INTERFACIAL LAYER-SEMICONDUCTOR JUNCTIONS

[51] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : 1323 - 1328

[52] RAMAN-SCATTERING STUDY OF THE THERMAL-OXIDATION OF INP [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 925 - 927

[53] INP-CDS SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 483 - 486

[54] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .2. EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 563 - 572

[55] STANNARD J, 1979, J VAC SCI TECHNOL, V16, P1462, DOI 10.1116/1.570222

[56] 15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 95 - 98

[57] SU P, 1980, THESIS COLLEGE WILLI

[58] SZE SM, 1969, PHYSICS SEMICONDUCTO

[59] HIGH-EFFICIENCY INP HOMOJUNCTION SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 400 - 402

[60] TIME-DEPENDENT RESPONSE OF INTERFACE STATES IN INDIUM-PHOSPHIDE METAL-INSULATOR SEMICONDUCTOR CAPACITORS INVESTIGATED WITH CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4014 - 4021

[51] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : 1323 - 1328

[52] RAMAN-SCATTERING STUDY OF THE THERMAL-OXIDATION OF INP [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 925 - 927

[53] INP-CDS SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 483 - 486

[54] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .2. EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 563 - 572

[55] STANNARD J, 1979, J VAC SCI TECHNOL, V16, P1462, DOI 10.1116/1.570222

[56] 15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 95 - 98

[57] SU P, 1980, THESIS COLLEGE WILLI

[58] SZE SM, 1969, PHYSICS SEMICONDUCTO

[59] HIGH-EFFICIENCY INP HOMOJUNCTION SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 400 - 402

[60] TIME-DEPENDENT RESPONSE OF INTERFACE STATES IN INDIUM-PHOSPHIDE METAL-INSULATOR SEMICONDUCTOR CAPACITORS INVESTIGATED WITH CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4014 - 4021