EFFECTS OF GROWTH DIRECTION ON LASING PERFORMANCE IN GAAS-ALXGA1-XAS QUANTUM-WELLS

被引：17

作者：

MENEY, AT

机构：

[1] Laser and Optical Systems Engineering Group Department, Mechanical Engineering University of Glasgow Glasgow

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 04期

关键词：

D O I：

10.1016/0749-6036(92)90194-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The properties of GaAsAlGaAs quantum well lasers are studied theoretically as a function of the crystallographic growth direction. The growth directions considered are [001] [111], [110], [310], [311] and [211]. The electronic dispersion is obtained using an 8×8 k·p Hamiltonian which couples the electron, heavy-hole, light-hole and spin-orbit split-off bands. We calculate the threshold current for single quantum well lasers and determine the lowest threshold current for the growth directions considered. It is seen that for some growth directions the threshold current can be less than that previously calculated for a strained-layer quantum well laser. The results also differ from a previous model which completely decoupled the valence and conduction bands. © 1992.

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页码：387 / 392

页数：6

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