INITIAL GROWTH-MECHANISM OF GAAS ON SI(110)

被引：19

作者：

LOPEZ, M

IKEI, T

TAKANO, Y

PAK, K

YONEZU, H

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 441, Tempaku-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 03期

关键词：

Antiphase boundaries; GaAs/Si heterostructure; Molecular beam epitaxy; Reflection high-energy electron diffraction; Twins; Two-dimensional growth;

D O I：

10.1143/JJAP.29.551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the initial growth mechanism of GaAs on Si(110) by molecular beam epitaxy. From in-situ reflection high-energy electron diffraction (RHEED) measurements we infer an initial two-dimensional growth mode. Streak RHEED patterns were observed up to about 20 Åthickness of GaAs epitaxial growth. With further deposition, extra spots appeared due to twins. We propose a model in which the twins are formed from antiphase domain boundaries. © 1990 The Japan Society of Applied Physics.

引用

页码：551 / 554

页数：4

共 11 条

[1] INTERFACE MORPHOLOGY STUDIES OF(110)AND(111)GE-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, CA .

APPLIED PHYSICS LETTERS, 1982, 40 (12) :1037-1039

[2] POLAR HETEROJUNCTION INTERFACES [J].

HARRISON, WA ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[3] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J].

HULL, R ;

FISCHERCOLBRIE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :851-853

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[5] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].

KROEMER, H ;

POLASKO, KJ ;

WRIGHT, SC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765

[6] NUCLEATION AND GROWTH OF GAAS ON GE AND THE STRUCTURE OF ANTIPHASE BOUNDARIES [J].

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :874-877

[7] GROWTH OF (111) GAAS ON (111) SI USING MOLECULAR-BEAM EPITAXY [J].

RADHAKRISHNAN, G ;

LIU, J ;

GRUNTHANER, F ;

KATZ, J ;

MORKOC, H ;

MAZUR, J .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1596-1598

[8]

Stowell M.J., 1975, EPITAXIAL GROWTH B, P444

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J].

WRIGHT, SL ;

KROEMER, H ;

INADA, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2916-2927

[10] MISFIT STRESS DEPENDENCE OF DISLOCATION DENSITY REDUCTION IN GAAS FILMS ON SI SUBSTRATES GROWN BY STRAINED-LAYER SUPERLATTICES [J].

YAMAGUCHI, M ;

SUGO, M ;

ITOH, Y .

APPLIED PHYSICS LETTERS, 1989, 54 (25) :2568-2570

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