GROWTH OF (111) GAAS ON (111) SI USING MOLECULAR-BEAM EPITAXY

被引：11

作者：

RADHAKRISHNAN, G

LIU, J

GRUNTHANER, F

KATZ, J

MORKOC, H

MAZUR, J

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[3] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1596 / 1598

页数：3

共 11 条

[1] HIGH-PERFORMANCE SELF-ALIGNED GATE (AL,GA)AS/GAAS MODFETS ON MBE LAYERS GROWN ON (100) SILICON SUBSTRATES [J].

ARCH, DK ;

MORKOC, H ;

VOLD, PJ ;

LONGERBONE, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :635-637

[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J].

CHOI, HK ;

TURNER, GW ;

WINDHORN, TH ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :500-502

[4] LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

CHONG, TC ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :221-223

[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[6] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].

MASSELINK, WT ;

HENDERSON, T ;

KLEM, J ;

FISCHER, R ;

PEARAH, P ;

MORKOC, H ;

HAFICH, M ;

WANG, PD ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311

[7]

MORKOC H, 1985, IEEE ELECTRON DEVICE, V6, P38

[8] ALGAAS/GAAS TRANSVERSE JUNCTION STRIPE LASERS FABRICATED ON SI SUBSTRATES USING SUPERLATTICE INTERMEDIATE LAYERS BY MOCVD [J].

SAKAI, S ;

HU, XW ;

UMENO, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :1085-1088

[9] GAAS E/D MESFET 1-KBIT STATIC RAM FABRICATED ON SILICON SUBSTRATE [J].

SHICHIJO, H ;

LEE, JW ;

MCLEVIGE, WV ;

TADDIKEN, AH .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) :121-123

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SI(211) [J].

UPPAL, PN ;

KROEMER, H .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2195-2203

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