MISFIT STRESS DEPENDENCE OF DISLOCATION DENSITY REDUCTION IN GAAS FILMS ON SI SUBSTRATES GROWN BY STRAINED-LAYER SUPERLATTICES

被引：71

作者：

YAMAGUCHI, M ^{[1
]}

SUGO, M ^{[1
]}

ITOH, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPT ELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

关键词：

D O I：

10.1063/1.101052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2568 / 2570

页数：3

共 13 条

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[8] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES
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[10] ANALYSIS OF STRAINED-LAYER SUPERLATTICE EFFECTS ON DISLOCATION DENSITY REDUCTION IN GAAS ON SI SUBSTRATES
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