NUCLEATION AND GROWTH OF GAAS ON GE AND THE STRUCTURE OF ANTIPHASE BOUNDARIES

被引：84

作者：

PETROFF, PM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：874 / 877

页数：4

共 8 条

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[2] ANTIPHASE BOUNDARIES IN GAAS
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[3] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER
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WALDROP, JR
KOWALCZYK, SP
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1295 - 1299
[4] KRAUT EA, 1984, J VAC SCI TECHNOL B, V2, P411
[5] DARK-FIELD ELECTRON-MICROSCOPY OF DISSOCIATED DISLOCATIONS AND SURFACE STEPS IN SILICON USING FORBIDDEN REFLECTIONS
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[6] MICROSCOPY OF SURFACES AND APPLICATIONS TO MOLECULAR-BEAM EPITAXY
PETROFF, PM
CHEN, CH
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[J]. ULTRAMICROSCOPY, 1985, 17 (03) : 185 - 191
[7] MOLECULAR-BEAM EPITAXY OF GE AND GA1-XALXAS ULTRA THIN-FILM SUPER-LATTICES
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[8] ZURCHER P, 1983, J VAC SCI TECHNOL, V1, P696