ANTIPHASE BOUNDARIES IN GAAS

被引：56

作者：

CHO, NH ^{[1
]}

DECOOMAN, BC ^{[1
]}

CARTER, CB ^{[1
]}

FLETCHER, R ^{[1
]}

WAGNER, DK ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.95963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：879 / 881

页数：3

相关论文

共 10 条

[1] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
ZIMMERMAN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +
[2] STRUCTURAL STUDIES OF GE-GAAS INTERFACES
CHANG, CA
KUAN, TS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 315 - 319
[3] A REVIEW OF RECENT ADVANCES IN SEMICONDUCTOR SUPER-LATTICES
CHANG, LL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 120 - 125
[4] FLETCHER RM, 1984, MATER RES SOC S P, V25, P417
[5] ANTIPHASE BOUNDARIES IN SEMICONDUCTING COMPOUNDS
HOLT, DB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (06) : 1297 - &
[6] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE
MORIZANE, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 249 - 254
[7] SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS
NEAVE, JH
LARSEN, PK
JOYCE, BA
GOWERS, JP
VANDERVEEN, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 668 - 674
[8] THE STRUCTURE AND CRYSTALLOGRAPHY OF LATERAL TWIN BOUNDARIES IN SILICON
POND, RC
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 51 - 56
[9] A SIMPLE METHOD FOR THE DETERMINATION OF STRUCTURE-FACTOR PHASE-RELATIONSHIPS AND CRYSTAL POLARITY USING ELECTRON-DIFFRACTION
TAFTO, J
SPENCE, JCH
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1982, 15 (FEB) : 60 - 64
[10] TAFTO J, 1979, 39TH P ANN M EMSA SA, P154