THERMAL RECOVERY PROCESS OF THE MIDGAP-STATE PROFILE OF LIGHT-SOAKED UNDOPED HYDROGENATED AMORPHOUS-SILICON

被引：4

作者：

MATSUURA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.100964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：344 / 346

页数：3

相关论文

共 10 条

[1] KINETICS OF THE METASTABLE OPTICALLY INDUCED ELECTRON-SPIN-RESONANCE IN A-SI-H
LEE, C
OHLSEN, WD
TAYLOR, PC
ULLAL, HS
CEASAR, GP
[J]. PHYSICAL REVIEW B, 1985, 31 (01): : 100 - 105
[2] AMORPHOUS SI AND SI-BASED ALLOYS FROM GLOW-DISCHARGE PLASMA
MATSUDA, A
[J]. PURE AND APPLIED CHEMISTRY, 1988, 60 (05) : 733 - 740
[3] OHMIC CONTACT PROPERTIES OF MAGNESIUM EVAPORATED ONTO UNDOPED AND P-DOPED A-SI=H
MATSUURA, H
OKUNO, T
OKUSHI, H
YAMASAKI, S
MATSUDA, A
HATA, N
OHEDA, H
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L197 - L199
[4] A NOVEL METHOD FOR DETERMINING THE GAP-STATE PROFILE AND ITS APPLICATION TO AMORPHOUS SI1-XGE-H FILMS
MATSUURA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1964 - 1973
[5] THE ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN A-SI-H
QIU, CH
LI, W
HAN, DX
PANKOVE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 713 - 717
[6] SHEPARD K, 1988, MATER RES SOC S P, V118, P147
[7] INTRINSIC DANGLING-BOND DENSITY IN HYDROGENATED AMORPHOUS-SILICON
SMITH, ZE
WAGNER, S
[J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5510 - 5513
[8] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[9] ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
JACKSON, WB
TSAI, CC
[J]. PHYSICAL REVIEW B, 1986, 34 (01): : 63 - 72
[10] KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
JACKSON, WB
TSAI, CC
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1075 - 1077