PICOSECOND RECOMBINATION OF CHARGED CARRIERS IN GAAS

被引：32

作者：

MCLEAN, DG ^{[1
]}

ROE, MG ^{[1
]}

DSOUZA, AI ^{[1
]}

WIGEN, PE ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 15期

关键词：

D O I：

10.1063/1.96634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：992 / 993

页数：2

共 9 条

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[8] DYNAMICS OF PHOTOEXCITED GAAS BAND-EDGE ABSORPTION WITH SUBPICOSECOND RESOLUTION [J].

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[9] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].

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