A METASTABLE ELECTRON TRAP IN PLASTICALLY DEFORMED SILICON

被引：5

作者：

STEFANIAK, M

ALEXANDER, H

机构：

[1] Abteilung für Metallphysik im II. Physikalischen Institut der Universität zu Köln, Köln

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 01期

关键词：

D O I：

10.1007/BF00323436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We communicate on an unusual feature of the DLTS spectrum of plastically deformed n-type silicon. In the cooling mode the DLTS signal at 240 K suddenly jumps nearly to zero. We interpret this effect as an entropy driven metastability of the deepest deformation-induced electron trap.

引用

页码：62 / 64

页数：3

共 15 条

[1]

BROHL M, COMMUNICATION

[2]

Feklisova O. V., 1989, Materials Science Forum, V38-41, P1373, DOI 10.4028/www.scientific.net/MSF.38-41.1373

[3] THEORY OF CARRIER RECOMBINATION AT DISLOCATIONS IN GERMANIUM [J].

FIGIELSKI, T .

PHYSICA STATUS SOLIDI, 1964, 6 (02) :429-440

[4]

Golovanov Leonid, 1988, PHIL CULT ACT 17E C, P290, DOI [10.5840/wcp1719882578, DOI 10.5840/WCP1719882578]

[5] ENTROPY-DRIVEN METASTABILITIES IN DEFECTS IN SEMICONDUCTORS [J].

HAMILTON, B ;

PEAKER, AR ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1988, 61 (14) :1627-1630

[6]

KIMERLING LC, 1981, I PHYS C SER, V59, P401

[7]

KISIELOWSKI C, IN PRESS PHYS REV

[8]

Kisielowski-Kemmerich C., 1986, Materials Science Forum, V10-12, P745, DOI 10.4028/www.scientific.net/MSF.10-12.745

[9] TUNNELING FROM DISLOCATION CORES IN SILICON SCHOTTKY DIODES [J].

NITECKI, R ;

POHORYLES, B .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01) :55-61

[10] ELECTRICAL-PROPERTIES OF DISLOCATIONS AND POINT-DEFECTS IN PLASTICALLY DEFORMED SILICON [J].

OMLING, P ;

WEBER, ER ;

MONTELIUS, L ;

ALEXANDER, H ;

MICHEL, J .

PHYSICAL REVIEW B, 1985, 32 (10) :6571-6581

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