ENTROPY-DRIVEN METASTABILITIES IN DEFECTS IN SEMICONDUCTORS

被引：26

作者：

HAMILTON, B ^{[1
]}

PEAKER, AR ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.61.1627

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1627 / 1630

页数：4

共 12 条

[1] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS
CHANTRE, A
BOIS, D
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[4] THE ANALYSIS OF EXPONENTIAL AND NON-EXPONENTIAL TRANSIENTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6462 - 6470
[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[6] METASTABLE M-CENTER IN INP - DEFECT-CHARGE-STATE CONTROLLED STRUCTURAL RELAXATION
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STAVOLA, M
BENTON, JL
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1983, 28 (10): : 5848 - 5855
[7] ELECTRONICALLY CONTROLLED METASTABLE DEFECT REACTION IN INP
LEVINSON, M
BENTON, JL
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6216 - 6221
[8] AN ANOMALOUS FEATURE ON THE DLTS SPECTRUM OF SILICON
LONDOS, CA
[J]. SOLID STATE COMMUNICATIONS, 1987, 62 (10) : 719 - 722
[9] TEMPERATURE EFFECTS IN ATOMIC DIFFUSION IN SILICON
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3462 - 3464
[10] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday
Stutzmarm, Martin
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09): : 3024 - 3026

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