METASTABLE M-CENTER IN INP - DEFECT-CHARGE-STATE CONTROLLED STRUCTURAL RELAXATION

被引：43

作者：

LEVINSON, M

STAVOLA, M

BENTON, JL

KIMERLING, LC

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.28.5848

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：5848 / 5855

页数：8

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共 14 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[2] BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95
[3] SULFUR-RELATED TRAP IN GAAS1-XPX
CRAVEN, RA
FINN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343
[4] TRANSIENT CAPACITANCE STUDIES OF AN ELECTRON TRAP AT EC-ET=0.105EV IN PHOSPHORUS-DOPED SILICON
JELLISON, GE
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5715 - 5719
[5] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[6] Langer J. M., 1980, Journal of the Physical Society of Japan, V49, P207
[7] LANGER JM, 1980, LECTURE NOTES PHYSIC, V122, P123
[8] CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS
LEVINSON, M
[J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3660 - 3662
[9] ELECTRONICALLY CONTROLLED METASTABLE DEFECT REACTION IN INP
LEVINSON, M
BENTON, JL
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6216 - 6221
[10] DEFECT STATES IN ELECTRON BOMBARDED N-INP
LEVINSON, M
BENTON, JL
TEMKIN, H
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 990 - 992