TEMPERATURE EFFECTS IN ATOMIC DIFFUSION IN SILICON

[1] SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2216 - 2218

[2] BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[3] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (04) : 360 - 363

[4] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817

[5] MONOVACANCY FORMATION ENTHALPY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2195 - 2198

[6] GOSELE U, 1979, I PHYS C SER, V46, P538

[7] Kelly P. J., 1986, Materials Science Forum, V10-12, P115, DOI 10.4028/www.scientific.net/MSF.10-12.115

[8] GREEN-FUNCTION CALCULATION OF THE LATTICE RESPONSE NEAR THE VACANCY IN SI - REPLY [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8789 - 8790

[9] MANNING JR, 1968, DIFFUSION KINETICS A

[10] SEMIVACANCY PAIR IN CRYSTALLINE SILICON [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (04) : 283 - &

[1] SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2216 - 2218

[2] BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[3] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (04) : 360 - 363

[4] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817

[5] MONOVACANCY FORMATION ENTHALPY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2195 - 2198

[6] GOSELE U, 1979, I PHYS C SER, V46, P538

[7] Kelly P. J., 1986, Materials Science Forum, V10-12, P115, DOI 10.4028/www.scientific.net/MSF.10-12.115

[8] GREEN-FUNCTION CALCULATION OF THE LATTICE RESPONSE NEAR THE VACANCY IN SI - REPLY [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8789 - 8790

[9] MANNING JR, 1968, DIFFUSION KINETICS A

[10] SEMIVACANCY PAIR IN CRYSTALLINE SILICON [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (04) : 283 - &