CONFIGURATIONALLY BISTABLE C-CENTER IN QUENCHED SI-B - POSSIBILITY OF A BORON-VACANCY PAIR

被引：34

作者：

CHANTRE, A

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.32.3687

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3687 / 3694

页数：8

共 30 条

[1]

BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[2]

BOIS D, 1977, J PHYS LETT-PARIS, V38, pL351, DOI 10.1051/jphyslet:019770038017035100

[3] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J].

CHANTRE, A ;

BOIS, D .

PHYSICAL REVIEW B, 1985, 31 (12) :7979-7988

[4] INFLUENCE OF SCAN SPEED ON DEEP LEVEL DEFECTS IN CW LASER ANNEALED SILICON [J].

CHANTRE, A ;

KECHOUANE, M ;

AUVERT, G ;

BOIS, D .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :98-100

[5] DEFECTS IN ULTRAFAST QUENCHED ALUMINUM-DOPED SILICON [J].

CHANTRE, A .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :263-265

[6] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J].

CHANTRE, A ;

KECHOUANE, M ;

BOIS, D .

PHYSICA B & C, 1983, 116 (1-3) :547-552

[7] DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME [J].

CHANTRE, A .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :269-280

[8]

CHANTRE A, UNPUB

[9]

CHANTRE A, 1983, DEFECTS SEMICONDUCTO, V2, P547

[10]

FEICHTINGER H, 1985, J ELECTRON MATER A, V14, P855

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