SHORT-CAVITY SINGLE-FREQUENCY INGAASP BURIED-HETEROSTRUCTURE LASERS

被引:8
作者
LEE, TP [1 ]
BURRUS, CA [1 ]
LINKE, RA [1 ]
NELSON, RJ [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1049/el:19830059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:82 / 83
页数:2
相关论文
共 9 条
[1]   ROOM-TEMPERATURE CW OPERATION OF 1.60 MU-M GAINASP INP BURIED-HETEROSTRUCTURE INTEGRATED LASER WITH BUTT JOINTED BUILT IN DISTRIBUTED BRAGG REFLECTION WAVEGUIDE [J].
ABE, Y ;
KISHINO, K ;
TANBUNEK, T ;
ARAI, S ;
KOYAMA, F ;
MATSUMOTO, K ;
WATANABE, T ;
SUEMATSU, Y .
ELECTRONICS LETTERS, 1982, 18 (10) :410-411
[2]   LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEDBACK INGAASP/INP CW LASERS [J].
AKIBA, S ;
UTAKA, K ;
SAKAI, K ;
MATSUSHIMA, Y .
ELECTRONICS LETTERS, 1982, 18 (02) :77-78
[3]   SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS [J].
BURRUS, CA ;
LEE, TP ;
DENTAI, AG .
ELECTRONICS LETTERS, 1981, 17 (25-2) :954-956
[4]   SHORT-CAVITY INGAASP INJECTION-LASERS - DEPENDENCE OF MODE SPECTRA AND SINGLE-LONGITUDINAL-MODE POWER ON CAVITY LENGTH [J].
LEE, TP ;
BURRUS, CA ;
COPELAND, JA ;
DENTAI, AG ;
MARCUSE, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) :1101-1113
[5]   MEASUREMENT OF BEAM PARAMETERS OF INDEX-GUIDED AND GAIN-GUIDED SINGLE-FREQUENCY INGAASP INJECTION-LASERS [J].
LEE, TP ;
BURRUS, CA ;
MARCUSE, D ;
DENTAI, AG ;
NELSON, RJ .
ELECTRONICS LETTERS, 1982, 18 (21) :902-904
[6]   OBSERVATION OF TRANSIENT SPECTRA AND MODE PARTITION NOISE OF INJECTION-LASERS [J].
LIU, PL ;
LEE, TP ;
BURRUS, CA ;
KAMINOW, IP ;
KO, JS .
ELECTRONICS LETTERS, 1982, 18 (21) :904-905
[7]   102 KM UNREPEATERED MONOMODE FIBER SYSTEM EXPERIMENT AT 140 MBIT S WITH AN INJECTION LOCKED 1.52MU-M LASER TRANSMITTER [J].
MALYON, DJ ;
MCDONNA, AP .
ELECTRONICS LETTERS, 1982, 18 (11) :445-447
[8]  
NAKAMURA M, 1980, JAN OSA TOP M INT GU
[9]   CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J].
NELSON, RJ ;
WILSON, RB ;
WRIGHT, PD ;
BARNES, PA ;
DUTTA, NK .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :202-207