FIELD-EFFECT-TRANSISTOR SELF-ELECTRO-OPTIC-EFFECT-DEVICE (FET-SEED) ELECTRICALLY ADDRESSED DIFFERENTIAL MODULATOR ARRAY

被引:7
作者
LENTINE, AL
CHIROVSKY, LMF
DASARO, LA
LASKOWSKI, EJ
PEI, SS
FOCHT, MW
FREUND, JM
GUTH, GD
LEIBENGUTH, RE
SMITH, LE
WOODWARD, TK
机构
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
[2] AT&T BELL LABS, HOLMDEL, NJ 07733 USA
[3] AT&T BELL LABS, BREINIGSVILLE, PA 18031 USA
来源
APPLIED OPTICS | 1994年 / 33卷 / 14期
关键词
D O I
10.1364/AO.33.002849
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We describe a 6 x 6 array of electrically addressed field-effect-transistor self-electro-optic-effect-device differential modulators in which each element has a single-stage amplifier to permit an input voltage of less than 1 V to control the output modulators, which can operate at as high as 10 V. The variations in the switching voltages across the array are less than +/-70 mV, and the individual array elements are operated at as high as 2 Gbits/s. We also measure cross talk between adjacent elements within the array, measure the dependence of the switching time on the input voltage swing, and calculate the dependence of the switching time that is due to the photocurrent of the modulators.
引用
收藏
页码:2849 / 2855
页数:7
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