ELECTRON-SPIN POLARIZATION IN PHOTOEMISSION FROM STRAINED GAAS GROWN ON GAAS1-XPX

被引：85

作者：

MARUYAMA, T ^{[1
]}

GARWIN, EL ^{[1
]}

PREPOST, R ^{[1
]}

ZAPALAC, GH ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.46.4261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs1-xPx buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3-mu-m and the phosphorus concentration x varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-mu-m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.

引用

收藏

页码：4261 / 4264

页数：4

相关论文

共 37 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[2] X-RAY-DIFFRACTION OF STRAIN RELAXATION IN SI-SI1-XGEX HETEROSTRUCTURES [J].

BARIBEAU, JM ;

SONG, KC ;

MUNRO, K .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :323-325

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[4]

Casey Jr H. C., 1978, HETEROSTRUCTURE LA A, P157

[5] STRAIN EFFECTS IN INGAAS/HAAS SUPERLATTICES [J].

DAHL, DA .

SOLID STATE COMMUNICATIONS, 1987, 61 (12) :825-826

[6] STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA [J].

DODSON, BW ;

TSAO, JY .

PHYSICAL REVIEW B, 1988, 38 (17) :12383-12387

[7] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[8] ON THE MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM-EPITAXY-GROWN INXGA1-XAS/GAAS SINGLE HETEROSTRUCTURES [J].

DRIGO, AV ;

AYDINLI, A ;

CARNERA, A ;

GENOVA, F ;

RIGO, C ;

FERRARI, C ;

FRANZOSI, P ;

SALVIATI, G .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) :1975-1983

[9] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[10] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J].

FRITZ, IJ .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1080-1081

← 1 2 3 4 →