THE EFFECT OF ILLUMINATION ON CONTACT ANGLES OF PURE WATER ON CRYSTALLINE SILICON

被引:17
作者
VERAGRAZIANO, R [1 ]
MUHL, S [1 ]
RIVERATORRES, F [1 ]
机构
[1] NATL AUTONOMOUS UNIV MEXICO, INST INVEST MAT, MEXICO CITY 04510, DF, MEXICO
关键词
D O I
10.1006/jcis.1995.1139
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Contact angle measurements between pure water and etched and nonetched p-type single-crystal pieces of silicon under different illumination conditions have been performed by direct measurement and by photographic analysis. The results indicate that the observed contact angles depend on the wavelength of the illumination used, as well as the condition of the sample surface. For the etched surface, violet light gave the largest contact angles and red light the smallest. In the case of the nonetched silicon red light resulted in the largest angles and violet in the smallest. The results are discussed in terms of the photovoltage effect and charge trapping in the oxide layer. (C) 1995 Academic Press, Inc.
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收藏
页码:591 / 597
页数:7
相关论文
共 16 条
[1]  
ADAMSON AW, 1990, PHYSICAL CHEM SURFAC
[2]   THE EFFECT OF SOLID-SURFACE HETEROGENEITY AND ROUGHNESS ON THE CONTACT-ANGLE DROP (BUBBLE) SIZE RELATIONSHIP [J].
DRELICH, J ;
MILLER, JD .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1994, 164 (01) :252-259
[3]   DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD [J].
DRESNER, J ;
SZOSTAK, DJ ;
GOLDSTEIN, B .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :998-999
[4]  
GAYDOS J, 1988, J COLLOID INTERF SCI, V120, P134
[5]   Linear or edge energy and tension as related to the energy of surface formation and of vaporization [J].
Harkins, WD .
JOURNAL OF CHEMICAL PHYSICS, 1937, 5 (02) :135-140
[6]  
Jr R.E., 1969, SURFACE COLLOID SCI, V2, P85
[7]  
LI D, 1990, COLLOID SURFACE, V43, P307
[8]   FORMATION OF DEVICE QUALITY SI SIO2 INTERFACES AT LOW SUBSTRATE TEMPERATURES BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2 [J].
LUCOVSKY, G ;
KIM, SS ;
FITCH, JT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :822-831
[9]   GROWTH OF NATIVE OXIDE ON A SILICON SURFACE [J].
MORITA, M ;
OHMI, T ;
HASEGAWA, E ;
KAWAKAMI, M ;
OHWADA, M .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1272-1281
[10]   LOW-TEMPERATURE SILICON SURFACE CLEANING BY HF ETCHING ULTRAVIOLET OZONE CLEANING (HF/UVOC) METHOD .1. - OPTIMIZATION OF THE HF TREATMENT [J].
SUEMITSU, M ;
KANEKO, T ;
MIYAMOTO, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (12) :2421-2424