FORMATION OF DEVICE QUALITY SI SIO2 INTERFACES AT LOW SUBSTRATE TEMPERATURES BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2

被引：43

作者：

LUCOVSKY, G ^{[1
]}

KIM, SS ^{[1
]}

FITCH, JT ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：822 / 831

页数：10

共 20 条

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[3] PLASMA-ENHANCED CVD OF HIGH-QUALITY INSULATING FILMS
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TIERNEY, E
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NGUYEN, TN
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 1 - 15
[4] DIMARIA DJ, 1980, J APPL PHYS, V51, P5801
[5] EFFECTS OF THERMAL HISTORY ON STRESS-RELATED PROPERTIES OF VERY THIN-FILMS OF THERMALLY GROWN SILICON DIOXIDE
FITCH, JT
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IRENE, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 153 - 162
[6] THERMAL STABILIZATION OF DEVICE QUALITY FILMS DEPOSITED AT LOW-TEMPERATURES
FITCH, JT
KIM, SS
LUCOVSKY, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 1871 - 1877
[7] FITCH JT, 1988, PHYSICS CHEM SIO2 SI, P139
[8] LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES
FOUNTAIN, GG
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MARKUNAS, RJ
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4744 - 4746
[9] EVIDENCE FOR THE OCCURRENCE OF SUBCUTANEOUS OXIDATION DURING LOW-TEMPERATURE REMOTE PLASMA ENHANCED DEPOSITION OF SILICON DIOXIDE FILMS
FOUNTAIN, GG
HATTANGADY, SV
RUDDER, RA
MARKUNAS, RJ
LUCOVSKY, G
KIM, SS
TSU, DV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 576 - 580
[10] LOW HYDROGEN CONTENT SILICON-NITRIDE DEPOSITED AT LOW-TEMPERATURE BY NOVEL REMOTE PLASMA TECHNIQUE
HATTANGADY, SV
FOUNTAIN, GG
RUDDER, RA
MARKUNAS, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 570 - 575

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