THE PREPARATION OF INSITU DOPED HYDROGENATED AMORPHOUS-SILICON BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

MEYERSON, BS

SCOTT, BA

WOLFORD, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1461 / 1465

页数：5

共 25 条

[1] MONOSILYLPHOSPHINE FORMATION BY RAPID SILYLENE INSERTION IN THE IR PHOTOCHEMISTRY OF SIH4-PH3 MIXTURES [J].

BLAZEJOWSKI, J ;

LAMPE, FW .

JOURNAL OF PHOTOCHEMISTRY, 1982, 20 (01) :9-16

[2]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] THE ROLE OF HYDROGEN IN HEAVILY DOPED AMORPHOUS-SILICON [J].

CARLSON, DE ;

SMITH, RW ;

MAGEE, CW ;

ZANZUCCHI, PJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (01) :51-68

[4] HYDROGENATED AMORPHOUS-SILICON THIN-FILMS PRODUCED BY ION PLATING [J].

COCKS, FH ;

SCHARMAN, AJ ;

JONES, PL ;

COGAN, SF .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :909-910

[5]

FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[6] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].

GAU, SC ;

WEINBERGER, BR ;

AKHTAR, M ;

KISS, Z ;

MACDIARMID, AG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :436-438

[7]

GREENBAUM SG, UNPUB

[8] RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J].

IQBAL, Z ;

VEPREK, S ;

WEBB, AP ;

CAPEZZUTO, P .

SOLID STATE COMMUNICATIONS, 1981, 37 (12) :993-996

[9] RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON [J].

IQBAL, Z ;

VEPREK, S .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02) :377-392

[10] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC ;

LUJAN, RA ;

ROSENBLUM, MP ;

STREET, RA ;

BIEGLESEN, DK ;

REIMER, JA .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :331-333

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