APPLICATION OF THE GHOST PROXIMITY EFFECT CORRECTION SCHEME TO ROUND BEAM AND SHAPED BEAM ELECTRON LITHOGRAPHY SYSTEMS

被引：15

作者：

OWEN, G

RISSMAN, P

LONG, MF

机构：

[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

5

引用

收藏

页码：153 / 158

页数：6

相关论文

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[2] KERN DP, 1980, 9TH P INT S EL ION B, P326
[3] NUSSBAUM, 1976, CONT OPTICS SCI ENG
[4] PROXIMITY EFFECT CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSE
OWEN, G
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[5] GHOST SOLUBILITY RATE RATIO - A NEW PARAMETER FOR CHARACTERIZATION OF POSITIVE ELECTRON RESISTS
RISSMAN, P
OWEN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 159 - 164