TIME-RESOLVED MEASUREMENT OF HOLE SWEEPOUT IN A GAAS PHOTOCONDUCTOR

被引：13

作者：

VONLEHMEN, A

BALLANTYNE, JM

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：87 / 89

页数：3

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[9] PICOSECOND NON-EQUILIBRIUM CARRIER TRANSPORT IN GAAS
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[10] PICOSECOND TIME RESOLVED REFLECTIVITY OF DIRECT GAP SEMICONDUCTORS
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