SUBMILLIAMPERE CONTINUOUS-WAVE ROOM-TEMPERATURE LASING OPERATION OF A GAAS MUSHROOM STRUCTURE SURFACE-EMITTING LASER

被引：9

作者：

YANG, YJ

DZIURA, TG

WANG, SC

HSIN, W

WANG, S

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 19期

关键词：

D O I：

10.1063/1.103063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2-0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2-4 μm diameter active region formed by chemical selective etching, and sandwiched between two Al0.05Ga0.95 As/ Al0.53Ga0.47 As distributed Bragg reflectors of very high reflectivity (98-99%) grown by metalorganic chemical vapor deposition.

引用

页码：1839 / 1840

页数：2

共 6 条

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[2]

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[3] GAALAS/GAAS SURFACE EMITTING LASER WITH HIGH REFLECTIVE TIO2/SIO2 MULTILAYER BRAGG REFLECTOR [J].

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[4]

KOAYAMA F, 1989, APPL PHYS LETT, V65, P221

[5]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P167

[6]

TAI K, 1989, OSA 89, P59

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