IMPULSE PHOTOCONDUCTANCE OF THIN-FILM POLYCRYSTALLINE SILICON

被引：4

作者：

HAMMOND, RB ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3155 / 3159

页数：5

共 18 条

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
AUSTON, DH
JOHNSON, AM
SMITH, PR
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 371 - 373
[2] PICOSECOND CORRELATION-MEASUREMENTS OF INDIUM-PHOSPHIDE PHOTOCONDUCTORS
DOWNEY, PM
AUSTON, DH
SMITH, PR
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 215 - 217
[3] PICOSECOND PHOTORESPONSE IN HE-3(+) BOMBARDED INP PHOTOCONDUCTORS
DOWNEY, PM
SCHWARTZ, B
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 207 - 209
[4] INTEGRATED SILICON PHOTOCONDUCTORS FOR PICOSECOND PULSING AND GATING
EISENSTADT, WR
HAMMOND, RB
DUTTON, RW
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 296 - 299
[5] EISENSTADT WR, 1985, UNPUB IEEE T ELECTRO
[6] GENERATION OF OPTICAL PULSES SHORTER THAN 0.1 PSEC BY COLLIDING PULSE MODE-LOCKING
FORK, RL
GREENE, BI
SHANK, CV
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 671 - 672
[7] OBSERVED CIRCUIT LIMITS TO TIME RESOLUTION IN CORRELATION-MEASUREMENTS WITH SI-ON-SAPPHIRE, GAAS, AND INP PICOSECOND PHOTOCONDUCTORS
HAMMOND, RB
PAULTER, NG
WAGNER, RS
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 289 - 291
[8] INTEGRATED PICOSECOND PHOTOCONDUCTORS PRODUCED ON BULK SI SUBSTRATES
HAMMOND, RB
PAULTER, NG
WAGNER, RS
EISENSTADT, WR
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 404 - 405
[9] DENSITY OF GAP STATES OF SILICON GRAIN-BOUNDARIES DETERMINED BY OPTICAL-ABSORPTION
JACKSON, WB
JOHNSON, NM
BIEGELSEN, DK
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 195 - 197
[10] PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON
JOHNSON, AM
AUSTON, DH
SMITH, PR
BEAN, JC
HARBISON, JP
ADAMS, AC
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6816 - 6819

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